Analysis of heat treatment and formation of gallium-vacancy-tellurium complexes in GaAs
- 4 January 1971
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 32 (8) , 1755-1760
- https://doi.org/10.1016/s0022-3697(71)80141-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Calculations of point defect concentrations and nonstoichiometry in GaAsJournal of Physics and Chemistry of Solids, 1971
- Optical Properties of n-Type GaAs. II. Formation of Efficient Hole Traps during Annealing in Te-Doped GaAsJournal of Applied Physics, 1969
- Effect of Heat Treatment on Photoluminescence of Te Doped GaAsJournal of Applied Physics, 1969
- Vapor pressures and phase equilibria in the GaAs systemJournal of Physics and Chemistry of Solids, 1967