Effect of Heat Treatment on Photoluminescence of Te Doped GaAs
- 15 March 1969
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (4) , 1983-1984
- https://doi.org/10.1063/1.1657885
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Photoluminescence Study of Thermal Conversion in GaAs Grown from Silica BoatsJournal of Applied Physics, 1968
- Conduction band density of states in impure GaAsJournal of Physics and Chemistry of Solids, 1968
- Effect of Heat Treatment with Excess Arsenic Pressure on Photoluminescence of p-Type GaAsJournal of Applied Physics, 1968
- Effect of Heat Treatment on Photoluminescence of Zn-Doped GaAsJournal of Applied Physics, 1967
- Photoluminescence of Cu-Doped Gallium ArsenideJournal of Applied Physics, 1966
- Absorption Edge of Impure Gallium ArsenidePhysical Review B, 1965
- Radiative recombination from GaAs directly excited by electron beamsSolid State Communications, 1964
- Changes in Electron Concentration of Donor-Doped GaAs Crystals Caused by AnnealingJournal of Applied Physics, 1963
- Infrared Absorption and Electron Effective Mass in-Type Gallium ArsenidePhysical Review B, 1959