Effect of Heat Treatment on Photoluminescence of Zn-Doped GaAs

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Abstract
Comparisons of photoluminescence at 20°, 77° and 300°K are made for Zn‐doped GaAs before and after heat treatment. It is found that the intensity of the Zn acceptor band I (hvZn) increases after heat treatment at 800°C for acceptor concentrations NA up to approximately 7×1018 cm−3. For NA > 7×1018 cm−3, I (hvZn) remains unchanged by heat treatment. These results can be attributed to lattice defects which dominate the nonradiative processes and are annealed out by heat treatment. Isochronal annealing of a lightly doped crystal in the temperature range 600°–1100°C shows that 800°C is the optimum heat‐treatment temperature for maximum luminescence intensity. This result can be rationalized by considering the temperature dependence of the total defect concentration. The broad band at 1.37 eV commonly seen in p‐type GaAs photoluminescence is found to practically disappear after heat treatment at temperatures greater than 600°C.

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