Optimum Electrode Materials for Ta2O5 Capacitors for High- and Low-Temperature Processes
- 1 March 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (3R) , 1293-1297
- https://doi.org/10.1143/jjap.33.1293
Abstract
In this paper, we describe the effects of electrode materials on the leakage current of Ta2O5 films, and show optimum electrode materials for high- and low-temperature processes. The leakage current depends on the electrode material and varies with the annealing temperature. The leakage current is mainly determined by the work function of the electrode before and after low-temperature annealing (400° C). On the other hand, after high-temperature annealing (800° C), the leakage current is also affected by the reaction between Ta2O5 and the electrode. From the viewpoint of the leakage current, TiN and Mo (or MoN) are optimum materials for low- and high-temperature processes, respectively.Keywords
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