Trap-assisted charge injection in MNOS structures
- 1 October 1973
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (10) , 4657-4663
- https://doi.org/10.1063/1.1662016
Abstract
Injection of charge carriers into the nitride in an MNOS structure by direct tunneling to traps in the nitride is studied in this paper. It is shown that this injection mechanism is very important for MNOS structures with thin oxides at low nitride fields (1–4 MV/cm). The dependence on field, temperature, and oxide thickness of this injection current are examined both theoretically and experimentally. It is furthermore proposed that this mechanism may be of considerable importance for charge transport in most insulators.This publication has 10 references indexed in Scilit:
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