Quantum mechanical calculation of the carrier distribution and the thickness of the inversion layer of a MOS field-effect transistor
- 23 September 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (9) , 1301-1309
- https://doi.org/10.1016/0038-1101(70)90027-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Berechnung des unbeweglichen Anteiles der Raumladung im Halbleiter einer MOS-StrukturSolid-State Electronics, 1968
- Transport Properties of Electrons in Inverted Silicon SurfacesPhysical Review B, 1968
- Mobility Anisotropy and Piezoresistance in Silicon p-Type Inversion LayersJournal of Applied Physics, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Statistical considerations in MOSFET calculationsSolid-State Electronics, 1967
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Surface mobility of holes in thermally oxidized silicon measured by the field effect and the hall effectSurface Science, 1964
- Transport properties of light and heavy holes in the space charge region of a clean and water covered (111) germanium surfaceSurface Science, 1964