Surface mobility of holes in thermally oxidized silicon measured by the field effect and the hall effect
- 31 December 1964
- journal article
- Published by Elsevier in Surface Science
- Vol. 2, 86-92
- https://doi.org/10.1016/0039-6028(64)90046-9
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Effective mobilities of surface carriers in germaniumJournal of Physics and Chemistry of Solids, 1962
- Surface magnetoconductivity experiments on siliconJournal of Physics and Chemistry of Solids, 1961
- Surface Transport TheoryPhysical Review B, 1958
- Surface States on Silicon and Germanium SurfacesPhysical Review B, 1956
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954