Fabrication of GaAs-Mo-Si structures by metalorganic chemical vapor deposition and laser annealing
- 1 June 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (11) , 972-974
- https://doi.org/10.1063/1.93819
Abstract
Undoped-polycrystalline GaAs layers were deposited on Mo layers by metalorganic chemical vapor deposition and annealed by pulse laser irradiation. The laser used here was a Q-switched ruby laser and the annealing was done by immersing the samples in SnCl2-dissolved methanol. Then, recrystallization and doping of the GaAs layers were successfully done. The Schottky characteristics were observed between the top GaAs layer and the Mo layer underneath; the barrier height was 0.53 eV.Keywords
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