Single-crystal-aluminum Schottky-barrier diodes prepared by molecular-beam epitaxy (MBE) on GaAs
- 1 June 1978
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (6) , 3328-3332
- https://doi.org/10.1063/1.325286
Abstract
Metal‐semiconductor surface barriers were formed by epitaxially grown Al(001) on GaAs(001) with MBE at room temperature. The diodes exhibit nearly ideal electrical characteristics. It is also demonstrated that different barrier heights may be achieved by growing Al layers on MBE GaAs surfaces with different surface stoichiometries.This publication has 21 references indexed in Scilit:
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