AsGaantisites and their relation to EL2 defects in GaAs

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Abstract
Photoquenching experiments of the magnetic circular dichroism and optically detected ESR and ENDOR signals of the As-antisite in various semi-insulating GaAs materials show that the isolated AsGa defects cannot be identified with the EL2 defect in either charge state. Investigations of the spin-lattice relaxation time T1 in conventional ESR and ODESR experiments show that the AsGa defects seen in conventional ESR are not isolated AsGa centres but most probably complexes of AsGa defects. Therefore the correlations established previously between EL2 and AsGa defects from conventional ESR experiments must be reinterpreted to be correlations between EL2 defects and complexes of AsGa defects.