Short‐Time Carrier Transport in Amorphous Pentacene

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Abstract
Motion of holes generated in an amorphous pentacene layer by a N2 laser flash is examined within a time range 10 ns to 1 p. Pentacene layers are prepared by vapour deposition onto a substrate held a t 140 K. An initial current spike is observed which is attributed to motion of holes with an short‐time mobility of the order of 0.1 cm2/Vs. Subsequently, carrier trapping occurs a t a rate constant > 107 s−1. The temperature dependence of the mobility is interpreted in terms of hopping through an array of hopping sites distributed in energy according to a Gaussian distri‐bution function.