Gate bias instability in polycrystalline silicon thin film transistors formed using various gate dielectrics
- 1 September 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 19 (1-4) , 105-108
- https://doi.org/10.1016/0167-9317(92)90402-d
Abstract
No abstract availableKeywords
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