Raman Scattering Measurements of Strains in ZnSe Epitaxial Films on GaAs
- 1 July 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (7R)
- https://doi.org/10.1143/jjap.27.1327
Abstract
Raman spectroscopy has been applied to the evaluation of strains in ZnSe films grown by molecular beam epitaxy on GaAs. The observed variation of the ZnSe LO phonon frequency with thickness is explained well in terms of the conversion from the elastic strain due to accommodation of the lattice mismatch to the thermal strain due to the difference in thermal expansion coefficients of the substrate and epitaxial film. The strains estimated from the Raman measurements are consistent with the results obtained from X-ray analyses by other researchers.Keywords
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