Interface Stress at ZnSe/GaAs:Cr Heterostructure

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Abstract
The interface stress at ZnSe/GaAs:Cr heterostructures grown by OMVPE has been investigated by measuring the Cr-related zero-phonon photoluminescence lines at 0.839 eV from the GaAs substrates. Based on analyses regarding the energy-shift and splitting of the luminescence lines, it has been found that a compressive biaxial stress exists in the substrate sides of these heterostructures; this is inconsistent with the stresses predicted for a lattice mismatch between the ZnSe epitaxial layer and the GaAs substrate. The interface stress at ZnSe/GaAs:Cr heterostructures grown by MBE were also investigated and the results are similar to those for OMVPE-grown heterostructures.