Space-charge behavior near implanted contacts on infrared detectors

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Abstract
A phenomenological model for the steady-state distribution of electric field and potential near an implanted contact on a low-temperature infrared detector is presented. The model assumes a linear distribution of trapped space charge and calculates the resulting electric field gradient and potential barrier that are established. The change in these distributions for changes in incident photon flux, applied electric field, or compensating donor concentration is determined. An increase in photon flux under constant applied electric field results in no change in the space-charge distribution for low-field situations. A change in field for constant flux conditions, by contrast, results in a change in potential barrier width and height. These results indicate that transient phenomena should be strongly dependent on operating conditions and may explain why a wide range of apparently unrelated transient phenomena are observed in practice.