Transient response of Ge:Be and Ge:Zn FIR photoconductors under low background photon flux conditions

This publication has 15 references indexed in Scilit:

• Excitation spectra of group-II acceptors in Ge: Ge(${\mathrm{Be}}^0$), Ge(${\mathrm{Be}}^{-}$), and Ge(${\mathrm{Mg}}^0$)
  Physical Review B, 1983
• Performance and materials aspects of Ge:Be photoconductors
  International Journal of Infrared and Millimeter Waves, 1983
• Spectroscopy of the solid-state analogues of the hydrogen atom: donors and acceptors in semiconductors
  Reports on Progress in Physics, 1981
• Ge : Ga photoconductors in low infrared backgrounds
  Applied Physics Letters, 1979
• Forum
  Optical Engineering, 1977
• FREQUENCY DEPENDENCE OF THE DEBYE LENGTH IN COMPENSATED EXTRINSIC PHOTOCONDUCTORS
  Applied Physics Letters, 1970
• Response Characteristics of Extrinsic Photoconductors
  Journal of Applied Physics, 1969
• Extrinsic Detectors
  Applied Optics, 1965
• Recombination processes in far infrared photoconductors
  Journal of Physics and Chemistry of Solids, 1961
• Transient Behavior of the Ohmic Contact
  Physical Review B, 1959