Performance and materials aspects of Ge:Be photoconductors
- 1 November 1983
- journal article
- Published by Springer Nature in International Journal of Infrared and Millimeter Waves
- Vol. 4 (6) , 945-954
- https://doi.org/10.1007/bf01009319
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Shallow acceptor population and free hole concentration in Si: In and Si:Ga with IR-photoexcitationApplied Physics A, 1982
- Temperature dependence of responsivity in closely compensated extrinsic infrared detectorsIEEE Transactions on Electron Devices, 1980
- Ge : Ga photoconductors in low infrared backgroundsApplied Physics Letters, 1979
- Stability of Oxides in High Purity GermaniumIEEE Transactions on Nuclear Science, 1979
- Zone Refining High-Purity GermaniumIEEE Transactions on Nuclear Science, 1978