Stability of Oxides in High Purity Germanium
- 1 January 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 26 (1) , 324-333
- https://doi.org/10.1109/tns.1979.4329653
Abstract
The thermochemical approach to reactions between dilute solutes is presented and applied to the stability of oxide second phases in the high purity germanium melt. Such oxide phases may degrade detector resolution and complicate purification. The equilibrium of oxygen between melt and gas allows both a convenient indication of the chemical potential of oxygen in the melt and a straightforward thermochemical calculation of reactions involving oxygen. For the range of oxygen (1013 - 1014 cm-3) and other impurity concentrations in high purity germanium no tabulated oxide is expected to be stable in the melt. If the concentration of oxygen in the melt is increased, the first important oxide phase to become stable is SiO2(1), strongly enriched with aluminum.Keywords
This publication has 16 references indexed in Scilit:
- Oxygen Equilibrium Between Germanium and Gas Over Melt during GrowthJournal of the Electrochemical Society, 1979
- Identification of oxide precipitates in annealed silicon crystalsApplied Physics Letters, 1978
- Al26Diffusion in SiO2of Integrated CircuitsJapanese Journal of Applied Physics, 1976
- Ultrapure GermaniumPublished by Springer Nature ,1974
- Chemical Impurities and Lattice Defects in High-Purity GermaniumIEEE Transactions on Nuclear Science, 1974
- Hole traps in germanium crystalsNuclear Instruments and Methods, 1973
- Characterization of Pure Germanium for Detector FabricationIEEE Transactions on Nuclear Science, 1972
- Tetragonal Germanium Dioxide and Equilibria in the Ge-O-H SystemJournal of the Electrochemical Society, 1965
- Germanium-Oxygen SystemThe Journal of Chemical Physics, 1956
- Equalibrium Thermochemistry of Solid and Liquid Alloys of Germanium and of Silicon. II. The Retrograde Solid Solubilities of Sb in Ge, Cu in Ge and Cu in SiThe Journal of Physical Chemistry, 1953