Shallow acceptor population and free hole concentration in Si: In and Si:Ga with IR-photoexcitation
- 1 February 1982
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 27 (2) , 71-78
- https://doi.org/10.1007/bf00615808
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- An explanation for the anomalous impurity concentrations in Si as measured by the Hall effectJournal of Applied Physics, 1981
- A new acceptor level in indium-doped siliconApplied Physics Letters, 1977
- Extrinsic silicon detectors for 3–5 and 8–14 μmInfrared Physics, 1976
- Shallow impurity states in semiconductors: Absorption cross-sections, excitation rates, and capture cross-sectionsSolid-State Electronics, 1975
- Electron and Hole-Capture Coefficient of Indium in Silicon at Low TemperaturesJournal of Applied Physics, 1968
- Effective mass and intrinsic concentration in siliconSolid-State Electronics, 1967
- On the photoionization of deep impurity centers in semiconductorsSolid State Communications, 1965
- Cascade Capture of Electrons in SolidsPhysical Review B, 1960
- Absorption spectra of impurities in silicon—IJournal of Physics and Chemistry of Solids, 1956
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952