Shallow impurity states in semiconductors: Absorption cross-sections, excitation rates, and capture cross-sections
- 31 March 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (3) , 235-245
- https://doi.org/10.1016/0038-1101(75)90055-6
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Optical and thermal depth of shallow traps in ZnSPhysica Status Solidi (a), 1973
- Photoionization cross sections of holes at zinc centers in siliconJournal of Applied Physics, 1973
- Transport and Photoelectrical Properties of Gallium Arsenide Containing Deep AcceptorsJournal of Applied Physics, 1972
- Photo-ionization of deep acceptors in gallium arsenideOptics Communications, 1971
- Experimental verification of the theoretical model for the photoionization of deep impurity centres in semiconductorsPhysica Status Solidi (b), 1970
- Infrared absorption due to donor states in ZnS crystalsJournal of Physics and Chemistry of Solids, 1968
- Far Infra‐Red PhotoconductivityPhysica Status Solidi (b), 1964
- Optical Transitions Involving Impurities in SemiconductorsPhysical Review B, 1963
- Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction bandJournal of Physics and Chemistry of Solids, 1960
- Absorption spectra of impurities in silicon—IJournal of Physics and Chemistry of Solids, 1956