Photoionization cross sections of holes at zinc centers in silicon
- 1 March 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (3) , 1259-1262
- https://doi.org/10.1063/1.1662337
Abstract
The spectral dependences of the photoionization cross sections for holes at neutral and singly ionized zinc centers are measured using photocapacitance transient techniques in n + p junctions. Lucovsky's delta function potential model fits the results well. The photoionization cross section for holes at singly ionized zinc centers is much greater than the photoionization cross section for electrons at doubly ionized zinc centers. A large electric field dependence and a small temperature dependence are observed near the absorption edge of the photoionization cross section for holes at singly ionized zinc centers. The temperature dependence indicates a possible two‐step photothermal process has taken place when the center is photoionized.This publication has 11 references indexed in Scilit:
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