Current and capacitance transient responses of MOS capacitor. II. Recombination centers in the surface space charge layer
- 16 November 1972
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 14 (1) , 59-70
- https://doi.org/10.1002/pssa.2210140105
Abstract
No abstract availableKeywords
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- Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of SiliconJournal of Applied Physics, 1964