Photo-ionization of deep acceptors in gallium arsenide
- 31 October 1971
- journal article
- Published by Elsevier in Optics Communications
- Vol. 4 (2) , 178-180
- https://doi.org/10.1016/0030-4018(71)90240-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- The photon-ionization cross-section of indium acceptors in siliconSolid State Communications, 1971
- Photoluminescence of Ag-doped p-type GaAsSolid State Communications, 1970
- A novel technique for measuring reflectivities in the near infraredOptics Communications, 1970
- Application of the Quantum-Defect Method to Optical Transitions Involving Deep Effective-Mass-Like Impurities in SemiconductorsPhysical Review B, 1969
- Application of quantum defect techniques to photoionization of impurities in semiconductorsJournal of Physics and Chemistry of Solids, 1967
- Hall-Effect Levels Produced in Te-Doped GaAs Crystals by Cu DiffusionJournal of Applied Physics, 1967
- Photoexcitation and Photoionization of Neutral Manganese Acceptors in Gallium ArsenidePhysical Review Letters, 1967
- Photoluminescence of Cu-Doped Gallium ArsenideJournal of Applied Physics, 1966
- On the photoionization of deep impurity centers in semiconductorsSolid State Communications, 1965
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964