Photoexcitation and Photoionization of Neutral Manganese Acceptors in Gallium Arsenide
- 20 March 1967
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 18 (12) , 443-445
- https://doi.org/10.1103/physrevlett.18.443
Abstract
Transitions to loosely bound excited-hole states of the manganese acceptor and photoionization to the valence band are observed. The manganese ionization energy is consistent with that predicted from conduction-electron capture luminescence, but optical-phonon-assisted transitions are lower in intensity.Keywords
This publication has 16 references indexed in Scilit:
- Absorption Edge of Impure Gallium ArsenidePhysical Review B, 1965
- Optical Determination of the Symmetry of the Ground States of Group-V Donors in SiliconPhysical Review B, 1965
- Excitation spectra of group III impurities in germaniumJournal of Physics and Chemistry of Solids, 1965
- An Optical Determination of the Ground-State Splittings of Group V Impurities in GermaniumPhysical Review B, 1964
- Wave functions and energies of shallow acceptor states in germaniumJournal of Physics and Chemistry of Solids, 1964
- The Effect of Optical Mode Phonons on the Absorption Spectra of Shallow Impurity CentresProceedings of the Physical Society, 1962
- Theory of shallow acceptor states in Si and GeJournal of Physics and Chemistry of Solids, 1962
- A theory of edge-emission phenomena in CdS, ZnS and ZnOJournal of Physics and Chemistry of Solids, 1959
- Infrared spectra of Group III acceptors in siliconJournal of Physics and Chemistry of Solids, 1958
- Optical Properties of Indium-Doped SiliconPhysical Review B, 1955