Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction band
- 1 November 1960
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 16 (1-2) , 76-83
- https://doi.org/10.1016/0022-3697(60)90075-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Infrared Absorption and Electron Effective Mass in-Type Gallium ArsenidePhysical Review B, 1959
- Über die Kantenemission und andere Emissionen des GaNZeitschrift für Naturforschung A, 1959
- One-Dimensional Impurity BandsPhysical Review B, 1958
- Intensity of Optical Absorption by ExcitonsPhysical Review B, 1957
- Shallow Impurity States in Silicon and GermaniumPublished by Elsevier ,1957
- Radiative Transitions in SemiconductorsPhysical Review B, 1955