High temperature operation of n-type 6H-SiC and p-type diamond MESFETs

Publisher Website

30 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/cornel.1993.303116

Abstract

No abstract available

Keywords

This publication has 5 references indexed in Scilit:

Comparison of 6H-SiC, 3C-SiC, and Si for power devices
IEEE Transactions on Electron Devices, 1993
The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications
Proceedings of the IEEE, 1991
Properties of Boron-Doped Epitaxial Diamond Films
Japanese Journal of Applied Physics, 1990
Optimum semiconductors for high-power electronics
IEEE Transactions on Electron Devices, 1989
A large-signal, analytic model for the GaAs MESFET
IEEE Transactions on Microwave Theory and Techniques, 1988