Oxygen striation and thermally induced microdefects in Czochralski-grown silicon crystals
- 15 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (2) , 157-159
- https://doi.org/10.1063/1.91806
Abstract
Oxygen striations in Czochralski‐grown silicon crystals have been directly observed by applying the scanning IR absorption technique to longitudinal sections. The oxygen striations were found to correlate clearly with thermally‐induced‐microdefect distributions. The results show that oxygen plays a very important role in microdefect formation. A critical oxygen concentration for microdefect introduction was estimated to be (7–8)×1017 cm−3 for 96‐h, 600 °C heat treatment.Keywords
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