Determination of oxygen concentration profiles in silicon crystals observed by scanning IR absorption using semiconductor laser
- 15 January 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (2) , 147-148
- https://doi.org/10.1063/1.91409
Abstract
Concentration profiles of interstitial oxygen in silicon crystals were determined by scanning IR absorption using PbTe‐Pb0.82Sn0.18Te semiconductor laser with the wavelength of 9.04±0.02 μm. IR beam was collimated to be 200 μm in diameter. Czochralski‐grown crystals showed a local concentration fluctuation of about 1.8×1017 cm−3 from the average of 1.1×1018 cm−3. This fluctuation corresponds to an oxygen striation in the silicon crystal.Keywords
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