Zum Nachweis von Sauerstoff in Mikrobereichen von versetzungsfreien Czochralski‐Silizium‐Einkristallen
- 1 January 1977
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 12 (8) , 871-878
- https://doi.org/10.1002/crat.19770120812
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Determination of parts per billion of oxygen in siliconSolid-State Electronics, 1970
- Surface profile analysis by helium-3 activation; oxygen in siliconAnalytical Chemistry, 1970
- Charged particle activation analysis for carbon, nitrogen and oxygen in semiconductor siliconJournal of Radioanalytical and Nuclear Chemistry, 1970
- Vibrational absorption of carbon in siliconJournal of Physics and Chemistry of Solids, 1965
- The solubility of oxygen in siliconJournal of Physics and Chemistry of Solids, 1959
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958
- Effect of Heat Treatment upon the Electrical Properties of Silicon CrystalsJournal of Applied Physics, 1957
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957
- Electrical and Optical Properties of Heat-Treated SiliconPhysical Review B, 1957