Effect of Heat Treatment upon the Electrical Properties of Silicon Crystals
- 1 December 1957
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 28 (12) , 1427-1436
- https://doi.org/10.1063/1.1722672
Abstract
Studies have been made of the process in which donors are introduced into silicon by heating in the temperature range 300°–500°C and are caused to disappear on heating at higher temperature. This phenomena is shown to depend on the conditions of growth and the heat‐treatment history of the crystal. Evidence is summarized which shows that oxygen is the impurity from which the donors are formed. The characteristics of the processes involved are described and possible mechanisms are discussed.This publication has 11 references indexed in Scilit:
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- Carrier Concentration Changes in p-Si Induced by Heat TreatmentJournal of the Physics Society Japan, 1957
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- Copper as an Acceptor Element in GermaniumPhysical Review B, 1952
- The flow due to a rotating discMathematical Proceedings of the Cambridge Philosophical Society, 1934