Determination of parts per billion of oxygen in silicon
- 30 November 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (11) , 1431-1434
- https://doi.org/10.1016/0038-1101(70)90078-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Determination of oxygen content in germanium and silicon by activation with He3 ionsAtomic Energy, 1967
- Mass Analysis of Ion Beams from a Low-Voltage Spark Ion Source for Ion-Implantation Doping of SemiconductorsJournal of Applied Physics, 1967
- Optimizing the Operating Parameters of Infrared SpectrometersApplied Optics, 1967
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957