Surface Morphology and Crystallite Size during Growth of Hydrogenated Microcrystalline Silicon by Plasma-Enhanced Chemical Vapor Deposition

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Abstract
The correlation between the surface morphology and the crystallite size during growth of hydrogenated microcrystalline silicon (µ c-Si:H) has been discussed using spectroscopic UV-visible phase-modulated ellipsometry, Raman spectroscopy and atomic force microscope (AFM). Through the deposition study of µ c-Si:H on Corning 7059 glass and Cr substrates from SiH4 highly diluted in H2 and layer-by-layer (LbL) technique by plasma-enhanced chemical-vapor deposition (PECVD), we found that the surface roughness during µ c-Si:H growth strongly influenced the creation of the crystallite phase and the relaxation of Si network. The ion bombardment induces surface roughness and decreases the crystallinity in µ c-Si:H growth. The LbL technique using H2 plasma promotes the nucleation and coalescence processes in the early stage of µ c-Si:H growth.

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