Silicon-Hydrogen (SiHn, (n= 1, 2, 3)) Bonding Configurations in Very Thin Hydrogenated Amorphous Silicon Films Deposited on Various Kinds of Substrates under Different SiH4 Dilution Conditions
- 1 November 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (11B) , L1577
- https://doi.org/10.1143/jjap.33.l1577
Abstract
Silicon-hydrogen ( SiH n , ( n=1, 2, 3)) bonding configurations in the very thin hydrogenated amorphous silicon (a-Si:H) films ( 4 dilution conditions have been investigated by means of infrared phase-modulated ellipsometry (IRPME). The silicon-hydrogen configurations are monitored as a function of film thickness for a variety of substrates and the various SiH4 dilution conditions of H2, Ar and He. The deposition thickness for SiH stretching mode become dominant is strongly influenced by the nature of the substrate and the SiH4 dilution conditions.Keywords
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