In situ study of the growth of hydrogenated amorphous silicon by infrared ellipsometry

19 August 1991

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 59 (8) , 950-952
https://doi.org/10.1063/1.106311

Abstract

The early stage of the growth of plasma deposited amorphous silicon (a‐Si:H) on glass substrates is investigated by in situ infrared phase modulated ellipsometry in the silicon–hydrogen stretching mode region. Analysis of the spectra provides unprecedented sensitivity and quantitative information on the film evolution. In particular SiH, SiH₂, and SiH₃ bonds are identified in 5–20 Å thick samples. The bond densities of SiH and SiH₂ in thin films are estimated. After the interaction with the substrate, a‐Si:H films grow beneath a hydrogen rich overlayer containing SiH₂ and SiH₃ bonds. At 250 °C the thickness of this overlayer is compatible with one monolayer. The hydrogen‐passivated surface of a‐Si:H is then weakly reactive.

Keywords

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