Oxidation of plasma-deposited hydrogenated amorphous silicon
- 1 February 1985
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 124 (3-4) , 217-222
- https://doi.org/10.1016/0040-6090(85)90268-8
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Ion bombardment effect on the growth of a-Si:H films deposited from a pure silane plasmaJournal of Non-Crystalline Solids, 1983
- Effect of surface oxide on transport properties in a-Si:HJournal of Non-Crystalline Solids, 1983
- Growth of hydrogenated amorphous silicon due to controlled ion bombardment from a pure silane plasmaApplied Physics Letters, 1983
- A structural interpretation of the infrared absorption spectra of a-Si:H:O alloysSolar Energy Materials, 1982
- Oxidation of glow discharge a-Si:HSolid-State Electronics, 1982
- Fast polarization modulated ellipsometer using a microprocessor system for digital Fourier analysisReview of Scientific Instruments, 1982
- Oxidation studies of hydrogenated amorphous siliconSurface Science, 1982
- Adsorbate effects on the electrical conductance of a-Si: HPhilosophical Magazine Part B, 1982
- Porosity and oxidation of amorphous silicon films prepared by evaporation, sputtering and plasma-depositionSolar Energy Materials, 1979
- Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen SubstanzenAnnalen der Physik, 1935