Ir Laser Assisted Grading Of Mocvd GaAsp

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Abstract
We hypothesize that a primary growth mechanism for the MOCVD growth of GaAsP is a series of surface catalyzed methane elimination reactions, and that they can be affected either thermally or photochemically by the absorption of light from a CO2 TEA laser tuned to an absorption maxima. Our preliminary results show that the laser dramatically alters the morphology and supresses the phosphorus incorporation rate when the laser is tuned to an absorption maxima for the AsH3, We interpret these results to indicate that, for the conditions used, the the primary effect of the laser is photochemical, and that the phosphorus incorporation can be increased by exciting PH3, instead of AsH3,. Once the growth mechanisms are better understood and the growth conditions are optimized GaAs1−xPx/GaAs1-yPy superlattices with atomically abrupt junctions should be able to be grown simply by turning the laser on and off.