Optimum growth condition of single-crystalline undoped ZnS grown by the molecular-beam-epitaxial method using a H2S gas source

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Abstract
Crystal characterization by photoluminescence and x‐ray diffraction has been performed to find out the optimum growth condition of ZnS grown by the gas‐source molecular‐beam‐epitaxial (MBE) method. In this crystal growth, important parameters are the cracking temperature of H2S gas (Tcr), the film thickness (d), both molecular‐beam flux intensities (JZn and JΣS or inlet H2S gas pressure Pin), and substrate temperature (Tsub). A single crystal having a fairly high quality, whose half width of x‐ray diffraction FWHM is about 0.119° (the reference value of the GaAs substrate used is 0.093°), is obtained under the growth conditions Pin=1.4×10−5 Torr (corresponding flux intensity JΣS=7×1015 cm−2 s−1), JZn/JΣS=1, and Tsub=325 °C in the case of Tcr=780 °C and d≂1 μm.