Growth mechanism and defects in SiC prepared by sublimation method
- 1 February 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 147 (3-4) , 339-342
- https://doi.org/10.1016/0022-0248(94)00658-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Growth of large SiC single crystalsJournal of Crystal Growth, 1993
- Investigation of growth processes of ingots of silicon carbide single crystalsJournal of Crystal Growth, 1978
- Growth of silicon carbide crystals by vapour-liquid-solid (VLS) mechanism in the sublimation methodJournal of Crystal Growth, 1973
- Thermodynamic Study of SiC Utilizing a Mass SpectrometerThe Journal of Chemical Physics, 1958