Brillouin scattering study in the GaN epitaxial layer
- 1 April 1996
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 219-220, 547-549
- https://doi.org/10.1016/0921-4526(95)00807-1
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Polarized Raman spectra in GaNJournal of Physics: Condensed Matter, 1995
- Application of a microscope to Brillouin scattering spectroscopyReview of Scientific Instruments, 1992
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991
- Determination of the whole set of elastic constants of a polymeric Langmuir-Blodgett film by Brillouin spectroscopyPhysical Review B, 1989
- Study of the elastic properties of gallium nitridePhysica Status Solidi (a), 1978
- Refractive index of GaNPhysica Status Solidi (a), 1971