Polarized Raman spectra in GaN
- 6 March 1995
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 7 (10) , L129-L133
- https://doi.org/10.1088/0953-8984/7/10/002
Abstract
We have measured polarized Raman spectra in a 2.0 mu m GaN epitaxial layer of high quality, grown on a sapphire substrate. All symmetry-allowed optical phonons in GaN have been assigned as follows: A1(LO), 735 cm-1; A1(TO), 533 cm-1; E1(LO), 743 cm-1; E1(TO), 561 cm-1; E2, 144 and 569 cm-1. Using the Lyddane-Sachs-Teller relation, the static dielectric constants of GaN for the ordinary and extraordinary directions have been estimated as epsilon perpendicular to 0=9.28 and E/sub //0/=10.1. We have also observed quasi-LO phonons in GaN. A brief discussion on these will be given.Keywords
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