Thermal Annealing Effects on P-Type Mg-Doped GaN Films
- 1 February 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (2B) , L139-142
- https://doi.org/10.1143/jjap.31.l139
Abstract
Low-resistivity p-type GaN films were obtained by N2-ambient thermal annealing at temperatures above 700°C for the first time. Before thermal annealing, the resistivity of Mg-doped GaN films was approximately 1×106 Ωcm. After thermal annealing at temperatures above 700°C, the resistivity, hole carrier concentration and hole mobility became 2 Ωcm, 3×1017/cm3 and 10 cm2/Vs, respectively. In photoluminescence measurements, the intensity of 750-nm deep-level emissions (DL emissions) sharply decreased upon thermal annealing at temperatures above 700°C, as did the change in resistivity, and 450-nm blue emissions showed maximum intensity at approximately 700°C of thermal annealing.Keywords
This publication has 7 references indexed in Scilit:
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991
- Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer LayersJapanese Journal of Applied Physics, 1991
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991
- In Situ Monitoring of GaN Growth Using Interference EffectsJapanese Journal of Applied Physics, 1991
- Novel metalorganic chemical vapor deposition system for GaN growthApplied Physics Letters, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- The Equilibrium Pressure of N2 over GaNJournal of the Electrochemical Society, 1972