P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (1A) , L8
- https://doi.org/10.1143/jjap.32.l8
Abstract
P-GaN/n-InGaN/n-GaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) were fabricated successfully for the first time. The output power was 125 µW and the external quantum efficiency was as high as 0.22% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum (FWHM) of the electroluminescence (EL) were 440 nm and 180 meV, respectively. This value FWHM of was the smallest ever reported for blue GaN LEDs.Keywords
This publication has 14 references indexed in Scilit:
- High-Quality InGaN Films Grown on GaN FilmsJapanese Journal of Applied Physics, 1992
- Hole Compensation Mechanism of P-Type GaN FilmsJapanese Journal of Applied Physics, 1992
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991
- Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxyApplied Physics Letters, 1991
- Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer LayersJapanese Journal of Applied Physics, 1991
- In Situ Monitoring of GaN Growth Using Interference EffectsJapanese Journal of Applied Physics, 1991
- Novel metalorganic chemical vapor deposition system for GaN growthApplied Physics Letters, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Properties of Ga1-xInxN Films Prepared by MOVPEJapanese Journal of Applied Physics, 1989