Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy

28 October 1991

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 59 (18) , 2251-2253
https://doi.org/10.1063/1.106086

Abstract

InGaN single‐crystal films were grown on (0001) plane sapphire substrates at 800 °C by metalorganic vapor phase epitaxy. By using such a high temperature for growth, the crystalline quality has been greatly improved. But a high nitrogen over pressure and high indium source flow rate were necessary to achieve significant indium incorporation during growth. For the first time, photoluminescence has been observed in InGaN, and near‐band edge emission is seen in the photoluminescence at 77 K. From this photoluminescence, the dependence of a near‐band edge emission on the indium mole fraction of InGaN has been investigated.

Keywords

This publication has 2 references indexed in Scilit:

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