Properties of Ga1-xInxN Films Prepared by MOVPE
- 1 August 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (8A) , L1334
- https://doi.org/10.1143/jjap.28.l1334
Abstract
Epitaxial films of the solid solution Ga1-x In x N (up to X=0.42) have been fabricated on (0001) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) at 500°C. The properties of the films have been studied by the reflection high-energy electron diffraction technique, X-ray diffraction, and electrical and optical measurements. The fundamental absorption edge of the film decreases linearly with composition (up to X=0.42) from 3.20 eV to 2.01 eV at room temperature.Keywords
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