Fundamental absorption edge in GaN, InN and their alloys
- 30 September 1972
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 11 (5) , 617-621
- https://doi.org/10.1016/0038-1098(72)90474-7
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Electrical and Optical Properties of rf-Sputtered GaN and InNApplied Physics Letters, 1972
- Low-Temperature Luminescence of GaNJournal of Applied Physics, 1970
- OPTICAL ABSOPTION OF GaNApplied Physics Letters, 1970
- Luminescent properties of GaNSolid State Communications, 1970
- Electronic Structures of Semiconductor AlloysPhysical Review B, 1970
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. II. Ionization Potentials and Interband Transition EnergiesPhysical Review B, 1969
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. I. Electronic Dielectric ConstantPhysical Review B, 1969
- Dielectric Definition of ElectronegativityPhysical Review Letters, 1968
- Preparation, Stability, and Luminescence of Gallium NitrideJournal of the Electrochemical Society, 1962