Effects of substrate misorientation on doping characteristics and band gap energy for InGaAlP crystals grown by metalorganic chemical vapor deposition
- 1 August 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 113 (1-2) , 127-130
- https://doi.org/10.1016/0022-0248(91)90017-y
Abstract
No abstract availableKeywords
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