MOSFET electron inversion layer mobilities - a physically based semi-empirical model for a wide temperature range
- 1 August 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (8) , 1456-1463
- https://doi.org/10.1109/16.30959
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
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