A semi-empirical model of the MOSFET inversion layer mobility for low-temperature operation
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (1) , 89-93
- https://doi.org/10.1109/t-ed.1987.22889
Abstract
This paper reports on a semi-empirical model of the mobility in the inversion layer of enhancement-type MOSFET's operated at low temperatures. The n-channel model is based on three different scattering mechanisms important at cryogenic temperatures--phonon, Coulomb, and surface roughness scattering. It is shown that the degradation of the mobility with the vertical field is accelerated at low temperatures and has a different functional form compared to that at the above room temperature. The p-channel model is the extension of a high-temperature model. The simple analytical expression presented here is suitable for use in a circuit simulation program like SPICE. The definition and the temperature dependence of the effective normal field are reexamined for both n- and p-channel devices.Keywords
This publication has 13 references indexed in Scilit:
- Semi-empirical model for the threshold voltage of a double implanted MOSFET and its temperature dependenceSolid-State Electronics, 1987
- [Back matter]IEEE Electron Device Letters, 1986
- The classical versus the quantum mechanical model of mobility degradation due to the gate field in MOSFET inversion layersIEEE Transactions on Electron Devices, 1985
- Semi-empirical equations for electron velocity in silicon: Part II—MOS inversion layerIEEE Transactions on Electron Devices, 1983
- Electron and hole mobilities in silicon as a function of concentration and temperatureIEEE Transactions on Electron Devices, 1982
- Temperature dependence of scattering in the inversion layerSurface Science, 1980
- Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfacesIEEE Transactions on Electron Devices, 1980
- Simulation of impurity freezeout through numerical solution of Poisson's equation with application to MOS device behaviorIEEE Transactions on Electron Devices, 1980
- Temperature dependent threshold behavior of depletion mode MOSFETs: Characterization and simulationSolid-State Electronics, 1979
- Very small MOSFET's for low-temperature operationIEEE Transactions on Electron Devices, 1977