Temperature dependent threshold behavior of depletion mode MOSFETs: Characterization and simulation
- 30 April 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (4) , 423-430
- https://doi.org/10.1016/0038-1101(79)90096-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Very small MOSFET's for low-temperature operationIEEE Transactions on Electron Devices, 1977
- Computer solution of one-dimensional Poisson's equationIEEE Transactions on Electron Devices, 1975
- Temperature dependence of the band gap of siliconJournal of Applied Physics, 1974
- Effective mass and intrinsic concentration in siliconSolid-State Electronics, 1967
- Hole and electron mobilities in doped silicon from radiochemical and conductivity measurementsJournal of Physics and Chemistry of Solids, 1960