Magic Islands in Si/Si(111) Homoepitaxy
- 27 July 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 81 (4) , 858-861
- https://doi.org/10.1103/physrevlett.81.858
Abstract
The island size distribution after submonolayer deposition of Si on Si(111) exhibits pronounced peaks of magic sizes. Scanning tunneling microscopy studies during growth enable us to study directly the influence of surface reconstructions on growth kinetics. Lateral growth of rows of the width of the reconstruction unit cell leads to kinetic stabilization of magic islands. Monte Carlo calculations are performed that reproduce the main experimental results and make it possible to estimate important energy barriers.
Keywords
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